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CEB730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED730G

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEF730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU730G

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

详细参数

  • 型号:

    CEB730G

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
C
23+
T0-263
6000
原装正品,支持实单
询价
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
CET/華瑞
2511
TO-263
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
CET
23+
TO263
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
24+
TO263
482
询价
CET/華瑞
20+
TO-263
834
现货很近!原厂很远!只做原装
询价
CET
25+
TO-263
834
原装正品,假一罚十!
询价
CENTRAL
24+
SOP
8336
公司现货库存,支持实单
询价
SR
23+
T0-263
5000
原装正品,假一罚十
询价
更多CEB730G供应商 更新时间2025-7-13 14:02:00