N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 72A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package

文件：403.44 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 72A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package

文件：403.44 Kbytes 页数：4 Pages

CET

华瑞

100V / 75A N-Channel Enhancement Mode MOSFET

文件：244.29 Kbytes 页数：4 Pages

HY

虹扬科技

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：94.17 Kbytes 页数：4 Pages

IXYS

艾赛斯