N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.92 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V.\n                 RDS(ON) =28mΩ @VGS = 4.5V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ Lead free product is acquired.\n■ TO-220 & TO-263 package. ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V.\n                 RDS(ON) =28mΩ @VGS = 4.5V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ Lead free product is acquired.\n■ TO-220 & TO-263 package. ;

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：143.62 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.92 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：143.62 Kbytes 页数：4 Pages

CET

华瑞