N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

文件：513.64 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 60A, RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 18.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：531.57 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞