N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 60A, RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 18.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：531.57 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 60A, RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 18.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：531.57 Kbytes 页数：5 Pages

CET

华瑞

WFBGA-84

MICROCHIP/微芯

上传：深圳市明嘉莱科技有限公司

TO251

CET

华瑞

上传：深圳市尼博电子有限公司