| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CEB60N06G | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. 文件：647.86 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | |
CEB60N06G | N-Channel Enhancement Mode Field Effect Transistor 文件：426.07 Kbytes 页数：4 Pages | CET 华瑞 | CET | |
CEB60N06G | N Channel MOSFET | CET 华瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor 文件：426.07 Kbytes 页数：4 Pages | CET 华瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. 文件：647.86 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-CHANNEL Logic Level POWER MOSFET 文件：277.99 Kbytes 页数：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC |
技术参数
- BVDSS(V)：
60
- Rds(on)mΩ@10V：
16
- ID(A)：
60
- Qg(nC)@10V(typ)：
52
- RθJC(℃/W)：
1.2
- Pd(W)：
125
- Configuration：
Single
- Polarity：
N
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
25+ |
TO-263 |
156579 |
明嘉莱只做原装正品现货 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
TO-263(S) |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VBsemi |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CET/華瑞 |
2022+ |
TO-263 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VBsemi |
24+ |
TO263 |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
VB |
25+ |
TO-263(S) |
3068 |
原装正品,假一罚十! |
询价 | ||
VIA |
24+ |
BGA |
7130 |
公司现货库存,支持实单 |
询价 | ||
VBSEMI/台湾微碧 |
24+ |
TO-263(S) |
60000 |
询价 | |||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
询价 |
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