N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 60A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● TO-220 & TO-263 package.

文件：534.57 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：426.55 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 42A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：624.91 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：527.84 Kbytes 页数：5 Pages

CET

华瑞