N-Channel Enhancement Mode Field Effect Transistor

URES ■ 100V, 60A, RDS(ON) = 23.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：97.78 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 57A, RDS(ON) = 24mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：519.679 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

URES ■ 100V, 60A, RDS(ON) = 23.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：97.78 Kbytes 页数：4 Pages

CET

华瑞

60A,100V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C

文件：1.22981 Mbytes 页数：5 Pages

THINKISEMI

思祁半导体

N-Channel MOSFET uses advanced trench technology

文件：1.17058 Mbytes 页数：3 Pages

DOINGTER

杜因特