N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V. • Super high dense cell design for extremely low RDS(ON) • High power and current handling capability. • TO-220 & TO-263 package.

文件：524.79 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n• 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V.\n• Super high dense cell design for extremely low RDS(ON)\n• High power and current handling capability.\n• TO-220 & TO-263 package. • 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V.\n• Super high dense cell design for extremely low RDS(ON)\n• High power and current handling capability.\n• TO-220 & TO-263 package.;

CET

华瑞

14-stage ripple-carry binary counter/divider and oscillator

DESCRIPTION The HEF4060B is a 14-stage ripple-carry binary counter/divider and oscillator with three oscillator terminals (RS, RTC and CTC), ten buffered outputs (O3 to O9 and O11 to O13) and an overriding asynchronous master reset input (MR). The oscillator configuration allows design of eithe

文件：110.58 Kbytes 页数：7 Pages

PHI

PHI

14-stage ripple-carry binary counter/divider and oscillator

DESCRIPTION The HEF4060B is a 14-stage ripple-carry binary counter/divider and oscillator with three oscillator terminals (RS, RTC and CTC), ten buffered outputs (O3 to O9 and O11 to O13) and an overriding asynchronous master reset input (MR). The oscillator configuration allows design of eithe

文件：110.58 Kbytes 页数：7 Pages

PHI

PHI

14-stage ripple-carry binary counter/divider and oscillator

DESCRIPTION The HEF4060B is a 14-stage ripple-carry binary counter/divider and oscillator with three oscillator terminals (RS, RTC and CTC), ten buffered outputs (O3 to O9 and O11 to O13) and an overriding asynchronous master reset input (MR). The oscillator configuration allows design of eithe

文件：110.58 Kbytes 页数：7 Pages

PHI

PHI