P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：104.25 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

文件：900.88 Kbytes 页数：4 Pages

CET-MOS

华瑞

丝印：D2PAK；Package：TO-263；P-Channel 30-V (D-S) MOSFET

文件：967.38 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P Channel MOSFET

CET

华瑞