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CEB30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件:420.91 Kbytes 页数:4 Pages

CET

华瑞

CEB30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:647.12 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB30N15L

N Channel MOSFET

CET

华瑞

CEF30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:647.12 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEP30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件:420.91 Kbytes 页数:4 Pages

CET

华瑞

CEP30N15L

N-Channel MOSFET uses advanced trench technology

文件:1.23099 Mbytes 页数:5 Pages

DOINGTER

杜因特

技术参数

  • BVDSS(V):

    150

  • Rds(on)mΩ@10V:

    70

  • Rds(on)mΩ@5V:

    80

  • ID(A):

    30

  • Qg(nC)@10V(typ):

    72

  • RθJC(℃/W):

    1

  • Pd(W):

    150

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
CET/華瑞
23+
TO-263
80399
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CET
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NK/南科功率
2025+
TO-263
986966
国产
询价
CET/華瑞
2511
TO-263
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
CET
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
询价
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
VBsemi
24+
TO263
18000
原装正品 有挂有货 假一赔十
询价
VBSEMI
24+
TO263
48240
询价
CET
24+
30000
询价
更多CEB30N15L供应商 更新时间2026-1-27 14:02:00