CEF30N15L资料datasheet下载行情报价华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEF30N15L	文件：647.12 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：647.12 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF30N15L	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEP30N15L	文件：420.91 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：420.91 Kbytes 页数：4 Pages	CET 华瑞	CET
CEP30N15L	文件：1.23099 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.23099 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
CEP30N15L	文件：647.12 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：647.12 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多CEF30N15L供应商更新时间2025-10-5 14:02:00