N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：526.49 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：526.49 Kbytes 页数：5 Pages

CET

华瑞

128 bit Read/Write Contactless Identification Device with OTP function

Description EM4069 (previously named P4069) is a CMOS integrated circuit intended for use in electronic Read/Write RF transponders, with an optional lock function to disable EEPROM write operations. Features ■ 128 bit EEPROM organized in 8 words of 16 bits ■ 64 bit fixed code memory array lase

文件：261.459 Kbytes 页数：15 Pages

EMMICRO

HEX INVERTER

DESCRIPTION The HCC4069UB (extended temperature range) and HCF4069UB (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4069UB consists ofsix COS/MOS in verter circuits. Thisde

文件：283.24 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体