N-Channel Enhancement Mode Field Effect Transistor

FEATURES 5V, 108.5A, RDS(ON) = 8.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：417.85 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 55V, 108.5A, RDS(ON) = 8.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

文件：479.48 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 5V, 108.5A, RDS(ON) = 8.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：417.85 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 55V, 108.5A, RDS(ON) = 8.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

文件：479.48 Kbytes 页数：4 Pages

CET-MOS

华瑞

DDR VDDQ and Termination Voltage Regulator

Product Description The CM3205 is a dual-output, low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power MOSFET’s, the CM3205 can source up to 5A of VDDQ current, and source or sink up to 2A V

文件：235.03 Kbytes 页数：10 Pages

CALMIRCO