CEB13N07

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■70V,13A,RDS(ON)=125mΩ@VGS=10V. RDS(ON)=150mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED13N07

N-ChannelEnhancementModeFieldEffectTransistor

CEP13N07

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■70V,13A,RDS(ON)=125mΩ@VGS=10V. RDS(ON)=150mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU13N07

N-ChannelEnhancementModeFieldEffectTransistor

CHM13N07PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE70VoltsCURRENT11Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.