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CEB14A04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件:401.04 Kbytes 页数:4 Pages

CET

华瑞

CEB14A04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 180A, RDS(ON) = 5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

文件:615.59 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB14A04

N Channel MOSFET

CET

华瑞

CEP14A04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 180A, RDS(ON) = 5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

文件:615.59 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEP14A04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件:401.04 Kbytes 页数:4 Pages

CET

华瑞

技术参数

  • BVDSS(V):

    40

  • Rds(on)mΩ@10V:

    5

  • ID(A):

    180

  • Qg(nC)@10V(typ):

    110

  • RθJC(℃/W):

    0.75

  • Pd(W):

    200

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET/華瑞
24+
TO-263
499585
免费送样原盒原包现货一手渠道联系
询价
SR
23+
T0-263
5000
原装正品,假一罚十
询价
CET(华瑞)
2447
TO-263
105000
10个/管一级代理专营品牌!原装正品,优势现货,长期
询价
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
S
23+
T0-263
6000
原装正品,支持实单
询价
CET/華瑞
2407+
con
10750
只有原装!量大可以订!一片起卖!
询价
CET-MOS
10
询价
24+
N/A
50000
一级代理-主营优势-实惠价格-不悔选择
询价
CET-MOS
24+
con
10
现货常备产品原装可到京北通宇商城查价格
询价
NK/南科功率
2025+
TO-263
986966
国产
询价
更多CEB14A04供应商 更新时间2025-10-6 10:12:00