P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.09 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.09 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Power MOSFET

文件：1.37951 Mbytes 页数：7 Pages

HMSEMI

华之美半导体

P-Channel Enhancement Mode Power MOSFET

文件：1.21556 Mbytes 页数：7 Pages

HMSEMI

华之美半导体