HM35P03D

Marking：HM35P03D；Package：DFN5x6-8L；P-Channel Enhancement Mode Power MOSFET

ADM35P03Z

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●ReliableandRugged

CEB35P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-35A,RDS(ON)=36mΩ@VGS=-10V. RDS(ON)=57mΩ@VGS=-5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEP35P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-35A,RDS(ON)=36mΩ@VGS=-10V. RDS(ON)=57mΩ@VGS=-5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

HM35P03

P-ChannelEnhancementModePowerMOSFET

PJD35P03

30VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-8A

SPR35P03

P-ChannelEnhancementModePowerMOSFET

SSD35P03

P-ChEnhancementModePowerMOSFET