CEB21A3

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■30V,20A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■TO-220&TO-263package.

CEP21A3

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,20A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■TO-220&TO-263package.

CHM21A3PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT20Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

FYCL-S21A3

OUTDOORLAMPCLUSTER

GPC21A3

20KBSOUNDCONTROLLER

GPC21A3-NnnV-C

20KBSOUNDCONTROLLER

H21A3

1mmAPERTUREOPTO-ELECTRONICSINGLECHANNELSLOTTEDINTERRUPTERSWITCHESWITHTRANSISTORSENSORS

DESCRIPTION TheH21A_andH22A_seriesofopaquephotointerruptersaresinglechannelswitchesconsistingofaGalliumArsenideinfraredemittingdiodeandaNPNsiliconphototransistormountedinapolycarbonatehousing.The packageisdesignedtooptimisethemechanicalresolution,couplinge

H21A3

PHOTOTRANSISTOROPTICALINTERRUPTERSWITCH

DESCRIPTION TheH21A1,H21A2andH21A3consistofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinaplastichousing.Thepackagingsystemisdesignedtooptimizethemechanicalresolution,couplingefficiency,ambientlightrejection,costandreliability.T

H21A3

SLOTTEDOPTICALSWITCH

IXF-21A3AF

CrystalFilter3LeadMetalPackage