N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

文件：40.33 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞

SLOTTED OPTICAL SWITCH

文件：307.53 Kbytes 页数：4 Pages

QT

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. T

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FAIRCHILD

仙童半导体

Surface Mount Temperature Compensated Voltage Controlled Crystal Oscillators (TCVCXO)

MTCVO11/21 Series Surface Mount Temperature Compensated Voltage Controlled Crystal Oscillators (TCVCXO) Small size, high precision TCVCXO available in standard frequencies for telecommunications and other RF applications requiring clipped sinewave output with low power consumption. Operating volt

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MTRONPTI