N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package

文件：413.92 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 75A , RDS(ON) = 6.6mW @VGS = 10V. RDS(ON) = 9.5mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：397.84 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：993.67 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 75A , RDS(ON) = 6.6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9.5mW @VGS = 4.5V. Lead free product is acquired.

文件：617.19 Kbytes 页数：4 Pages

CET-MOS

华瑞