CEB07N8技术资料参数贸易商华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB07N8	文件：444.95 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：444.95 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEB07N8	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEF07N8	文件：444.95 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：444.95 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF07N8	文件：46.14 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 800V , 4A , RDS(ON)=2Ω @VGS=10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220F full-pak for through hole 文件：46.14 Kbytes 页数：5 Pages	CET 华瑞	CET
CEP07N8	文件：444.95 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：444.95 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEB07N8供应商更新时间2025-11-30 12:00:00