P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO3705/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck convertor applications. AO3705 and AO3705L are electrically identical. -R

文件：155.06 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO3705/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck convertor applications. AO3705 and AO3705L are electrically identical. -R

文件：155.06 Kbytes 页数：5 Pages

AOSMD

万国半导体

HEXFET짰 Power MOSFET

文件：1.029859 Mbytes 页数：11 Pages

IRF

Logic Level Advanced Process Technology

文件：384.15 Kbytes 页数：15 Pages

IRF

AUTOMOTIVE GRADE

文件：764.72 Kbytes 页数：13 Pages

INFINEON

英飞凌