Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：101.01 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：336.35 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：101.01 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：27.23 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

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