2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •Low-OnRe

2N7002W

N-ChannelMOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

2N7002W

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002W

Plastic-EncapsulateMosfets

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage MechanicalData •Case:SOT-323,MoldedPlastic •Terminals:SolderableperMIL-STD-202,Method208 •TerminalConnectio

2N7002W

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.34A(VGS=10V) ●RDS(ON)

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002W

MOSFET(N-Channel)

SOT-323Plastic-EncapsulateMOSFETS MOSFET(N-Channel) V(BR)DSSRDS(on)MAXID 60V5Ω@10V115mA 7Ω@5V

2N7002W

N-ChannelMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability