110N

型号：ISL91110IINZ-T；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

110N

型号：ISL91110IINZ-T7A；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

110N15SC

型号：BSC110N15NS5SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchi

110N20LF

型号：IPB110N20N3LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC6

110N12N6

型号：ISC110N12NM6；Package：PG-TDSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

110N100

型号：RM110N100BT2；Package：TO-220；N-Channel Trench MOSFET

Features Advancedtrenchcelldesign LowThermalResistance VDSS≥100VRDS(ON)≦4.1mΩ@VGS=10V

110N150

型号：RM110N150T2；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description TheRM110N150T2usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhigh

110N82

型号：RM110N82T2；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM110N82T2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=82V,ID=110A RDS(ON)

110N90

型号：RM110N90DF；Package：DFN5x6；N-Channel Trench MOSFET

Features HighEfficiency LowDenseCellDesign VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improveddv/dtcapability ReliableandRugged Application Halogen-free Networking,LoadSwtich LEDlighting,QuickCharger

110N7F6

型号：STH110N7F6-2；Package：H2PAK-2；N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package

Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Th