型号：IPTG111N20NM3FD；Package：PG-HSOG-8-1；OptiMOSTM 3 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Fast diode (FD) with reduced Qrr • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Optimized for hard commutation ruggedness

文件：1.35671 Mbytes 页数：11 Pages

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