丝印：110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC6

文件：997.29 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.22 Kbytes 页数：2 Pages

ISC

无锡固电

结合低 RDS(on) 与宽安全工作区 (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a • Combination of low R DS(on) and wide safe operating area (SOA)\n• High max. pulse current\n• High continuous pulse current\n\n优势:\n• Rugged linear mode operation\n• Low conduction losses\n• Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：353.4 Kbytes 页数：3 Pages

ISC

无锡固电

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC for target application • Halogen-free according to IEC6124

文件：452.77 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS 3 Power-Transistor

文件：739.46 Kbytes 页数：11 Pages

Infineon

英飞凌