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IPB110N20N3LF中文资料结合低 RDS(on) 与宽安全工作区 (SOA)数据手册Infineon规格书
IPB110N20N3LF规格书详情
描述 Description
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
特性 Features
• Combination of low R DS(on) and wide safe operating area (SOA)
• High max. pulse current
• High continuous pulse current
优势:
• Rugged linear mode operation
• Low conduction losses
• Higher in-rush current enabled for faster start-up and shorter down time
应用 Application
• Telecom
• Battery management
技术参数
- 制造商编号
：IPB110N20N3LF
- 生产厂家
：Infineon
- OPN
：IPB110N20N3LFATMA1
- Qualification
：Non-Automotive
- Package name
：PG-TO263-3
- VDS max
：200 V
- RDS (on) @10V max
：11 mΩ
- ID @25°C max
：88 A
- QG typ @10V
：76 nC
- Special Features
：Wide SOA
- Polarity
：N
- Operating Temperature min
：-55 °C
- Operating Temperature max
：150 °C
- Technology
：OptiMOS™ 3 LF
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
询价 | ||
Infineon(英飞凌) |
24+ |
PG-TO263-3 |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-263-3 |
34560 |
只做全新原装进口现货 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO263 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
Infineon |
23+ |
PG-TO263-3 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
Infineon(英飞凌) |
23+ |
PG-TO263-3 |
19850 |
原装正品,假一赔十 |
询价 |
