PESD5V0L1ULD

Marking：1110；Package：SOD882D；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina SOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithv

PESD5V0L1ULD-Q

Marking：1110；Package：DFN1006D-2；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina SOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithv

HFA1110IB

Marking：1110IB；Package：8LdSOIC；750MHz, Low Distortion Unity Gain, Closed Loop Buffer

TheHFA1110isaunitygainclosedloopbufferthatachieves-3dBbandwidthof750MHz,whileofferingexcellentvideoperformanceandlowdistortion.ManufacturedonIntersil’sproprietarycomplementarybipolarUHF-1process,theHFA1110alsooffersveryfastslewrate,andhighoutputcurrent.It

HFA1110IBZ

Marking：1110IBZ；Package：8LdSOIC；750MHz, Low Distortion Unity Gain, Closed Loop Buffer

TheHFA1110isaunitygainclosedloopbufferthatachieves-3dBbandwidthof750MHz,whileofferingexcellentvideoperformanceandlowdistortion.ManufacturedonIntersil’sproprietarycomplementarybipolarUHF-1process,theHFA1110alsooffersveryfastslewrate,andhighoutputcurrent.It

PDTA114YQA

Marking：111011；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm AEC-Q101qualified SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

PDTC114YQA

Marking：111001；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Generaldescription 100mANPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducedpickandplacecosts

PDTC114YQA

Marking：111001；Package：SOT1215；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm AEC-Q101qualified SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

PMDXB1200UPE

Marking：111000；Package：DFN1010B-6；30 V, dual P-channel Trench MOSFET

PMEG2020EPK

Marking：11100000；Package：DFN1608D-2；20 V, 2 A low VF MEGA Schottky barrier rectifier