丝印：110N7F6；Package：H2PAK-2；N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. Th

文件：912.92 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：110N7F6；Package：TO-220；N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. Th

文件：650.17 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体