| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：110N7F6；Package：H2PAK-2；N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：110N7F6；Package：TO-220；N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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