丝印：110N7F6；Package：TO-220；N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. Th

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STMICROELECTRONICS

意法半导体

N-channel 68 V, 0.0055 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

ST

意法半导体

TO-220

ST

上传：深圳市冠亿通科技有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司