丝印：110N；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

文件：797.82 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：110N；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

文件：797.82 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：110N15SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switchi

文件：1.06954 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC6

文件：997.29 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：110N12N6；Package：PG-TDSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.2528 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：110N100；Package：TO-220；N-Channel Trench MOSFET

Features Advanced trench cell design Low Thermal Resistance VDSS≥100V RDS(ON)≦4.1mΩ@VGS=10V

文件：1.07406 Mbytes 页数：5 Pages

RECTRON

丽正国际

丝印：110N150；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM110N150T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：1.48373 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：110N82；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM110N82T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

文件：286.13 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：110N90；Package：DFN5x6；N-Channel Trench MOSFET

Features High Efficiency Low Dense Cell Design VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improved dv/dt capability Reliable and Rugged Application Halogen-free Networking, Load Swtich LED lighting , Quick Charger

文件：900.69 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：110N7F6；Package：H2PAK-2；N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. Th

文件：912.92 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体