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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
20N120C	文件：820.86 Kbytes Page：9 Pages	Generalpurposeinverters	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
BRG20N120D	文件：769.26 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
FGA20N120FTD	文件：721.12 Kbytes Page：9 Pages	1200V,20ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGA20N120FTDTU	文件：721.12 Kbytes Page：9 Pages	1200V,20ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G20N120	文件：167.55 Kbytes Page：5 Pages	34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	Intersil Intersil Corporation	Intersil
G20N120	文件：121.05 Kbytes Page：8 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G20N120	文件：83.76 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa	Intersil Intersil Corporation	Intersil
G20N120	文件：97.79 Kbytes Page：8 Pages	45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos	Intersil Intersil Corporation	Intersil
G20N120	文件：93.09 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	Intersil Intersil Corporation	Intersil
HGH20N120A	文件：1.01653 Mbytes Page：5 Pages	N-ChannelEnhancementInsulatedGateBipolarTransistor Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司	Huashan
HGTG20N120	文件：167.55 Kbytes Page：5 Pages	34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	Intersil Intersil Corporation	Intersil
HGTG20N120CN	文件：83.76 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa	Intersil Intersil Corporation	Intersil
HGTG20N120CND	文件：121.05 Kbytes Page：8 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N120CND	文件：93.09 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	Intersil Intersil Corporation	Intersil
HM20N120AB	文件：804.31 Kbytes Page：8 Pages	KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM20N120T	文件：968.93 Kbytes Page：9 Pages	H&MNPTIGBTsofferlowerlossesandhigherenergy	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM20N120TB	文件：813.96 Kbytes Page：8 Pages	KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IHW20N120R	文件：358.29 Kbytes Page：12 Pages	ReverseConductingIGBTwithmonolithicbodydiode Features: •PowerfulmonolithicBodyDiodewithverylowforwardvoltage •Bodydiodeclampsnegativevoltages •TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior •NPTtechnologyoffers	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IHW20N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IXDA20N120AS	文件：54.05 Kbytes Page：4 Pages	HighVoltageIGBT HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp	IXYS IXYS Corporation	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	TGAN20N120FN	TRINNO	23+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	TGAN20N120FN	TRINNO	17+	TO-247	120	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
柒号芯城电子商务(深圳)有限公司	TGAN20N120FN	TRINNO	2023+	TO-247	700000	柒号芯城跟原厂的距离只有0.07公分	询价
深圳市吉中创电子科技有限公司	TGAN20N120FN	TRINNO	23+	TO-247	10800	只做原装欢迎咨询	询价
深圳市科恒伟业电子有限公司	TGAN20N135FD	TRINNO	1726+	TO-3P	6528	只做进口原装正品现货,假一赔十!	询价
深圳市华斯顿科技有限公司	TGAN20N135FD	TRINNO	22+23+	TO-3P	34883	绝对原装正品全新进口深圳现货	询价
深圳市赛芯源科技有限公司	TGAN20N135FD	TRINNO	19+	TO-3P	32000	原装正品,现货特价	询价
深圳兆威电子有限公司	TGAN20N135FD	TRINNO	23+	TO-3P	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市振芯物联科技有限公司	TGAN20N135FD	TRINNO	22+	TO-3P	13800	原装正品,品质保证,值得你信赖	询价
深圳市河锋鑫科技有限公司	TGAN20N135FD	TRINNO	TO-3P	22+	6000	十年配单,只做原装	询价

更多TGAN20N120FN供应商更新时间2024-9-21 9:00:00

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