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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HGTG20N120	文件：167.55 Kbytes Page：5 Pages	34A, 1200V N-Channel IGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120C3D	文件：97.79 Kbytes Page：8 Pages	45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120CN	文件：83.76 Kbytes Page：7 Pages	63A, 1200V, NPT Series N-Channel IGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120CND	文件：93.09 Kbytes Page：7 Pages	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120CND	文件：121.05 Kbytes Page：8 Pages	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N120E2	文件：167.55 Kbytes Page：5 Pages	34A, 1200V N-Channel IGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
20N120C	文件：820.86 Kbytes Page：9 Pages	Generalpurposeinverters	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD.	JSMC
BRG20N120D	文件：769.26 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
FGA20N120FTD	文件：721.12 Kbytes Page：9 Pages	1200V,20ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGA20N120FTDTU	文件：721.12 Kbytes Page：9 Pages	1200V,20ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G20N120	文件：167.55 Kbytes Page：5 Pages	34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：121.05 Kbytes Page：8 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G20N120	文件：93.09 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：97.79 Kbytes Page：8 Pages	45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：83.76 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGH20N120A	文件：1.01653 Mbytes Page：5 Pages	N-ChannelEnhancementInsulatedGateBipolarTransistor Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications	HuashanHuashan Electronic Devices Co 华汕电子器件	Huashan
HM20N120AB	文件：804.31 Kbytes Page：8 Pages	KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM20N120T	文件：968.93 Kbytes Page：9 Pages	H&MNPTIGBTsofferlowerlossesandhigherenergy	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM20N120TB	文件：813.96 Kbytes Page：8 Pages	KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IHW20N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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详细参数

型号：
HGTG20N120
制造商：
INTERSIL
制造商全称：
Intersil Corporation
功能描述：
34A, 1200V N-Channel IGBT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	HGTG20N120	INTERSIL	17+	TO-247	31518	原装正品可含税交易	询价
深圳市特顺芯科技有限公司	HGTG20N120	Intersil	08+(pbfree)	TO-247	8866		询价
深圳市百视威讯电子科技有限公司	HGTG20N120		23+	N/A	49300	正品授权货源可靠	询价
深圳兆威电子有限公司	HGTG20N120	INTERSIL	23+	TO-247	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市国宇半导体科技有限公司	HGTG20N120	INTERSIL	23+	TO-3P	10000	公司只做原装正品	询价
深圳市惊羽科技有限公司	HGTG20N120	RENESAS-瑞萨.	24+25+/26+27+	TO-247-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市宏捷佳电子科技有限公司	HGTG20N120	INTERSIL	24+	TO-3P	12300	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市昌和盛利电子有限公司	HGTG20N120E2	FAIRCHILD	23+	TO-247	9526		询价
深圳市星佑电子有限公司	HGTG20N120CND	FAIRCHILD	05+	原厂原装	4699	只做全新原装真实现货供应	询价
深圳市永贝尔科技有限公司	HGTG20N120CND	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价

更多HGTG20N120供应商更新时间2024-5-16 14:00:00

详细参数

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