H&M NPT IGBTs offer lower losses and higher energy

文件：968.93 Kbytes 页数：9 Pages

HMSEMI

华之美半导体

KEDA PT IGBTs offer lower losses and higher energy efficiency for application

文件：813.96 Kbytes 页数：8 Pages

HMSEMI

华之美半导体

Reverse Conducting IGBT with monolithic body diode

Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers

文件：358.29 Kbytes 页数：12 Pages

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌

High Voltage IGBT

High Voltage IGBT Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● high switching speed ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● International standard p

文件：54.05 Kbytes 页数：4 Pages

IXYS

艾赛斯