KEDA PT IGBTs offer lower losses and higher energy efficiency for application

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HMSEMI

华之美半导体

Reverse Conducting IGBT with monolithic body diode

Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers

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INFINEON

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

INFINEON

英飞凌

High Voltage IGBT

High Voltage IGBT Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● high switching speed ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● International standard p

文件：54.05 Kbytes 页数：4 Pages

IXYS

艾赛斯