首页 >FGA20N120FTD>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FGA20N120FTD | 1200V, 20A Trench IGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
1200V, 20A Trench IGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
包装：管件 封装/外壳：TO-3P-3，SC-65-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 40A 298W TO3PN | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
Generalpurposeinverters | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. |  | ||
Insulated-GateBipolarTransistorinaTO-3PPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | ||
45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
N-ChannelEnhancementInsulatedGateBipolarTransistor Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications | HuashanHuashan Electronic Devices Co 华汕电子器件 |  | ||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 |  | ||
H&MNPTIGBTsofferlowerlossesandhigherenergy | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | | ||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
ReverseConductingIGBTwithmonolithicbodydiode Features: •PowerfulmonolithicBodyDiodewithverylowforwardvoltage •Bodydiodeclampsnegativevoltages •TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior •NPTtechnologyoffers | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
FGA20N120FTD
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
1200V, 20A Trench IGBT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-3PN |
8866 |
询价 | |||
仙童 |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
FAIRCHI |
21+ |
TO-3P |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
23+ |
N/A |
36200 |
正品授权货源可靠 |
询价 | |||
仙童 |
1746+ |
TO3P |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
FAIRCHILD/仙童 |
12+ |
TO-3P |
10 |
原装正品现货,可开发票,假一赔十 |
询价 | ||
FSC |
20+ |
TO-3PN |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHI |
2020+ |
TO-3P |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FSC |
21+ |
TO-3P |
20 |
原装现货假一赔十 |
询价 |
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