General purpose inverters

文件：820.86 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

绝缘栅双极型晶体管/IGBT-IGBT

JSMC

华微电子

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode\n\nThe HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs\nand bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b  45A, 1200V, TC = 25oC\n 1200V Switching SOA Capability\n Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC\n Short Circuit Rating\n Low Conduction Loss;

Renesas

瑞萨

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

1200V, 20A Trench IGBT

文件：721.12 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1200V, 20A Trench IGBT

文件：721.12 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司