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20N120C

General purpose inverters

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

BRG20N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HGH20N120A

N-ChannelEnhancementInsulatedGateBipolarTransistor

Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

华汕电子器件汕头华汕电子器件有限公司

供应商型号品牌批号封装库存备注价格
HARRIS
23+
TO-3P
5000
原装正品,假一罚十
询价
IR
23+
TO-3P
50000
全新原装正品现货,支持订货
询价
IR
09+
TO-3P
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FAIRCHILD
2023+
TO-3P
8700
原装现货
询价
MAXIMUM
23+
TO-247
50000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
MAXIMUM
2023+
TO-247
50000
一级代理优势现货,全新正品直营店
询价
INFINEON/英飞凌
2022+
TO-247
61258
原厂代理 终端免费提供样品
询价
INFINEON
23+
TO-247
7000
询价
CHN
23+
TO-247
50000
全新原装正品现货,支持订货
询价
CHN
24+
NA/
9750
原装现货,当天可交货,原型号开票
询价
更多20N120C供应商 更新时间2025-7-22 15:36:00