45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode\n\nThe HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs\nand bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b  45A, 1200V, TC = 25oC\n 1200V Switching SOA Capability\n Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC\n Short Circuit Rating\n Low Conduction Loss;

Renesas

瑞萨

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los

文件：97.79 Kbytes 页数：8 Pages

INTERSIL

High-Speed IGBT for 20-50 kHz Switching

文件：227.38 Kbytes 页数：6 Pages

IXYS

艾赛斯

High-Speed IGBT for 20-50 kHz Switching

文件：227.38 Kbytes 页数：6 Pages

IXYS

艾赛斯