20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

文件：176.25 Kbytes 页数：3 Pages

UTC

友顺

Fast Switching

文件：95.42 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15549 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

20A, 600V N-CHANNEL  POWER MOSFET

The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customerswith planar stripe and DMOS technology. This technology isspecialized in allowing a minimu m on-state resistance and superior switching performance. It also can withstand high energy pulse • RDS(ON) = 0.45Ω @VGS = 10 V \n• High switching speed;

UTC

友顺

丝印：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：482.66 Kbytes 页数：7 Pages

RECTRON

丽正

丝印：20N60；Package：TO-220F-3L；N-Channel Power MOSFET

文件：530.17 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

丝印：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：325.79 Kbytes 页数：7 Pages

RECTRON

丽正

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

文件：114.65 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

文件：54.26 Kbytes 页数：2 Pages

IXYS

艾赛斯