20N60

型号：RM20N60LDV；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

20N60

型号：EC7320N60AR；Package：TO-220F-3L；N-Channel Power MOSFET

20N60

型号：RM20N60LD；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

20N60A4D

型号：HGTG20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode

20N60C3

型号：SPB20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

20N60C3

型号：SPP20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

20N60M2EP

型号：STB20N60M2-EP；Package：D2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a D²PAK package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Applications •Switchingapplications •Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

20N60M2EP

型号：STI20N60M2-EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Applications •Switchingapplications •Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

20N60M2EP

型号：STW20N60M2-EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Applications •Switchingapplications •Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

20N60A4

型号：IPD20N03L；Package：TO-263AB；600V, SMPS Series N-Channel IGBTs