丝印：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：482.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N60；Package：TO-220F-3L；N-Channel Power MOSFET

文件：530.17 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

丝印：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：325.79 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60M2EP；Package：D2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a D²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：475.9 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：262.029 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60M2EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：275.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60A4；Package：TO-263AB；600V, SMPS Series N-Channel IGBTs

文件：908.79 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司