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HGTG20N60A4D

Marking:20N60A4D;Package:TO-247;SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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