丝印：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：157.02 Kbytes 页数：9 Pages

Fairchild

仙童半导体