丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.06347 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

文件：788.12 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-220-3-1；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.83839 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：20N60C3；Package：PG-TO247；Cool MOS Power Transistor

文件：771.02 Kbytes 页数：13 Pages

Infineon

英飞凌

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

Intersil

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌