零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking:20N60C3;Package:TO-263-3;Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking:20N60C3;Package:TO-220-3-1;Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking:20N60C3;Package:TO-263-3;Cool MOS Power Transistor Feature new revolutionary high voltage technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking:20N60C3;Package:TO-263-3;Cool MOS Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking:20N60C3;Package:TO-220-3-1;New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking:20N60C3;Package:PG-TO247;Cool MOS Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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