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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HGTG20N60A4D	文件：351.72 Kbytes Page：9 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG20N60A4DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTG20N60A4D	文件：388.62 Kbytes Page：10 Pages	SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode	ONSEMION Semiconductor 安森美半导体安森美半导体公司
HGTG20N60A4D	文件：367.12 Kbytes Page：3 Pages	IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.7V（Max)@IC=20A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·Ultrafasttailcurrentshutoff ·AutomotiveChargers ·HighVoltageAuxiliaries	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
HGTG20N60A4D	文件：204.32 Kbytes Page：9 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartrans	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG20N60A4D	文件：157.02 Kbytes Page：9 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG20N60A4D_09	文件：157.02 Kbytes Page：9 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
20N60A4	文件：908.79 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
20N60A4D	文件：388.62 Kbytes Page：10 Pages	SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode600V TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode	ONSEMION Semiconductor 安森美半导体安森美半导体公司
HGTG20N60A4	文件：351.72 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60A4DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTG20N60A4	文件：204.32 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartrans	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG20N60A4	文件：140.56 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG20N60A4	文件：354.42 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP20N60A4	文件：354.42 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP20N60A4	文件：140.56 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司

详细参数

型号：
HGTG20N60A4D
功能描述：
IGBT 晶体管 600V
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集电极—发射极最大电压
VCEO：
650 V
集电极—射极饱和电压：
2.3 V
栅极/发射极最大电压：
20 V 在25
C的连续集电极电流：
150 A
栅极—射极漏泄电流：
400 nA
功率耗散：
187 W
封装/箱体：
TO-247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市奥皇科技有限公司	HGTG20N60A4D	ON	23+	/	1350	只做原装现货工厂免费出样欢迎咨询订单	询价
深圳市浩睿泽电子科技有限公司	HGTG20N60A4D	onsemi/安森美	新批次	TO-247	4500		询价
深圳市恒创达实业有限公司	HGTG20N60A4D	FAIRCHIL	17+	TO-247	6200	100%原装正品现货	询价
深圳市讯顺达科技有限公司	HGTG20N60A4D	ON	21+	TO-247	4500	全新原装公司现货	询价
千层芯半导体(深圳)有限公司	HGTG20N60A4D	ON	22+	TO-247	9000	只做原装假一赔十	询价
深圳市中利达电子科技有限公司	HGTG20N60A4D	FSC进口原	22+	TO-247	384	长源创新-只做原装---假一赔十	询价
深圳市科恒伟业电子有限公司	HGTG20N60A4D	FAIRCHILD/仙童	21+	NA	6850	只做原装正品假一赔十!正规渠道订货!	询价
深圳市欧立现代科技有限公司	HGTG20N60A4D	FAIRCHIL	22+	TO-247	6500	全新原装现货,欢迎询购!!	询价
深圳市河锋鑫科技有限公司	HGTG20N60A4D	FAIRCHILD/仙童	17+	TO-247	31518	原装正品可含税交易	询价
深圳市宏世佳电子科技有限公司	HGTG20N60A4D	FAIRCHIL	2023+	SOP	3795	全新原厂原装产品、公司现货销售	询价

更多HGTG20N60A4D供应商更新时间2024-4-26 13:40:00

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