SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

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ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：157.02 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va

文件：354.42 Kbytes 页数：9 Pages

Intersil

600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va

文件：140.56 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：351.72 Kbytes 页数：9 Pages

Intersil