HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

文件：114.65 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

文件：54.26 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFAST IGBT with Diode

Littelfuse

力特

HITACHI Encapsulation, DIP 16

文件：50.2 Kbytes 页数：1 Pages

HitachiHitachi Semiconductor

日立日立公司

CoolMOS Power Transistor

文件：471.68 Kbytes 页数：12 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件：654.59 Kbytes 页数：12 Pages

Infineon

英飞凌