Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

Intersil

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.06347 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

文件：788.12 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-220-3-1；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.83839 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：20N60C3；Package：PG-TO247；Cool MOS Power Transistor

文件：771.02 Kbytes 页数：13 Pages

Infineon

英飞凌

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be

Renesas

瑞萨

40A, 600V, Rugged UFS Series N-Channel IGBTs

\nDescription\nThis family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME\n(SCWT) condit • 40A, 600V TJ= 25oC\n• 600V Switching SOA Capability\n• Typical Fall Time at TJ= 150oC . . . . . . . . . . . . . 330ns\n• Short Circuit Rating at TJ= 150oC . . . . . . . . . . . . . 10µs\n• Low Conduction Loss;

Renesas

瑞萨