40A, 600V, Rugged UFS Series N-Channel IGBTs

\nDescription\nThis family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME\n(SCWT) condit • 40A, 600V TJ= 25oC\n• 600V Switching SOA Capability\n• Typical Fall Time at TJ= 150oC . . . . . . . . . . . . . 330ns\n• Short Circuit Rating at TJ= 150oC . . . . . . . . . . . . . 10µs\n• Low Conduction Loss;

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45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：144.01 Kbytes 页数：8 Pages

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仙童半导体

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：144.01 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

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